2014. 1. 09 1/1 semiconductor technical data FMMT311 revision no : 0 100v/540a 2-pack mosfet module (half - bridge) features h low r ds(on) h high frequency operation h dv/dt ruggedness h fast switching application h motor control h electric vehicle, automotive etc. internal circuit 22 0.3 90 0.3 9 0.3 17 0.3 17 0.3 28 0.2 28 0.2 5 0.3 24 0.2 54 0.3 62 0.3 72 0.3 24 0.2 5 0.5 9 0.5 15 0.5 9 0.3 4 0.3 2 0.2 2 0.2 1 1 2 2 3 3 72 0.3 80 0.3 m6 x 3 m4 x 4 2 s-1 s-2 s-3 s-6 s-5 s-4 4.2 6.4 0.2 0.2 0.2 maximum rating (@ta=25 ? per leg) characteristic symbol rating unit drain-to source breakdown voltage v dss 100 v gate to source voltage v gs ? 15 v continuous drain current @t c =25 ? i c 876 a @t c =100 ? 540 isolation voltage ac @ 1 minute v iso 2500 v junction temperature t j -40 ~ 150 ? storage temperature t stg -40 ~ 125 ? weight of module weight 98 ? 5 g terminal connection torque(m4) m 2 nm terminal connection torque(m6) m 5 nm outline drawing unit : mm fmt02
2014. 1. 09 2/3 FMMT311 revision no : 1 electrical characteristics (@ta=25 ? per leg, unless otherwise noted) temperature sensor (ntc thermistor) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 100 - - v breakdown voltage temperature coefficient bv dss / t j i d =5ma, referenced to 25 ? - 0.17 - v/ ? gate threshold voltage v th v ds =v gs , i d =250 u 3.0 - 5.0 v drain to source leakage current i dss v ds =100v, v gs =0v - - 20 a v ds =100v, v gs =0v, t j =125 ? - - 250 gate to source leakage current i gss v gs =15v, with protection circuit - - 10 ma v gs =-15v, with protection circuit - - -10 ma drain to source on resistance r ds(on) v gs =10v, i d =540a - 0.92 2 m ? dynamic total gate charge q g i d =540a, v ds =50v, v gs =10v - tbd - nc gate to source charge q gs - tbd - gate to source charge q gd - tbd - turn on delay time t d(on) - tbd - ns rise time t r - tbd - turn off delay tine t d(off) - tbd - fall time t r - tbd - input capacitance c iss - tbd - output capacitance c oss - tbd - reverse transfer capacitance c rss - tbd - pf source-drain diode ratings continuous source current i s - - 540 a pulsed source current i sp - - 3000 diode forward voltage v sd i d =540a, v gs =0v - 1.1 - v reverse recovery time t rr - tbd - ns reverse recovery charge q rr - tbd - nc parameter condition value units b constant 25/85 ? 3450 k b constant tolerance - ? 3 % resistance - 4.7 k ? resistance tolerance - ? 5 % operating temperature range - -40 ~ +125 ?
2014. 1. 09 3/3 FMMT311 revision no : 1 200 v ds [v] i d [a] 100 0 300 400 500 0 0.2 0.1 0.3 0.5 0.7 0.4 0.6 0.8 fig 1. saturation voltage characteristics v gs = 10v v gs = 9v v gs = 6v v gs = 5v common source tc = 25 ? i f [a] v f [v] fig 2. forward characteristics of inverse diode 200 100 0 300 500 400 0 0.2 0.4 0.6 0.8 1.0 1.2 tc = 25 ?
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